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Register a new userAuger Electron Spectroscopy of ZnO Films
مطيافية إلكترون أوجيه لأفلام من أكسيد الزنك ZnO
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Tishreen University ورقة بحثية
Publication date
2014
fields
Physics
and research's language is
العربية
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Shamra Editor
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أجريت دراسة التركيب الكيميائي السطحي بواسطة مطيافية إلكترون أوجيه (AES) لطبقات من أكسيد الزنك المنماة بطريقة الترسيب الذري الطبقي. و قد تم تحديد العناصر المتوافرة على سطوح المواد، و تعيين التركيز الذري للعناصر على السطوح. لوحظت كمية صغيرة فقط من الكربون أو من مركبات الكربون، تم إزالتها بسهولة من خلال قذفها بايونات الأرغون. كما تبين أيضا أن قذف سطح العينة بايونات الأرغون لمدة طويلة يستنفذ الأكسجين منه جزئيا.
A study of surface chemical composition has been performed by using Auger Electron Spectroscopy (AES) for ZnO layers grown by Atomic Layer Deposition (ALD) procedure.Elements on surface of materials were identified,and, an atomic concentration of elements on surface was determinate. Onlysmall amount of carbon or carbon compounds detected, easily removed by argon ion sputtering. Also, long argon ion sputtering partly depleted surface of oxygen.
References used
(Janotti Anderson and Van de Walle Chris G. Fundamentals of zinc oxide as a Semiconductor. Rep. Prog. Phys. 72, 2009, 126501 (1-29
(A. R. Chourasia and D. R. Chopra. Handbook of Instrumental Techniques for Analytical Chemistry, Auger Electron Spectroscopy. Texas A&M University–Commerce, 1995, (791–808
(McGuire, E. G. Handbook of Auger Electron Spectroscopy, Plenum press, New York, 1979, (404-405
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The work could be considered as a continuous study of (XRL) X – ray luminescence - spectra of pure, and mixed Zno different AL ions, In these films and other crystals powders prepared by new developed te chnology.
We studied the pure and ZnO thin
films. mixed with an AL - ions in the fielol (200-700)nm ,at different weig hrs (5,10,15,20)wt% prepared by thermal evaporation. This way is cheep and a simple technology.
Our study showed different spectra peaks at the wavelengths(335,410,521)nm anol (t=20ns)produced, at different peaks intensities of the prepared thin films, compared with those jure and mixeol ZnO ones, spray pyrolysis.
Thin films technology, have many wide scientific application, in the medical field, Lazer technology, Luminscence counters, and at the solar cells fields
In the present paper, we discuss the influence of point defects on electrical and
optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD)
method on glass and silicon substrates at low temperature (100°C). Room temperatu
re
photoluminescence (RT PL) spectra, secondary ion mass spectroscopy (SIMS), and Hall
Effect measurements were made for as-grown ZnO layers. The annealing process was
performed in air as well as in N2 atmosphere at 400°C for half an hour. The long annealing
resulted in a larger reduction in electron concentration. Simultaneously, an evident
increase in carrier's mobility was observed, which may suggest that annealing resulted in a
decreased number of native defects in the ZnO layers. Also, it was observed that hydrogen
atoms in ZnO samples did not dominate their electrical properties with the increase of
electrons concentration.
In this paper we present the structural, optical and electrical characteristics of ZnO thin films grown for different parameters by the atomic layer deposition (ALD) method. The films were grown on glass and silicon substrates at low temperatures. We
used diethyl-zinc (DEZn) and deionized water as zinc and an oxygen sources, respectively. Measurements of surface morphology, photoluminescence at room temperature (RT PL) and Hall Effect were made for ZnO layers. The films obtained at 130°C show the highest carrier concentration (1.1×1019 cm-3) and the lowest resistivity (2.84×10-2 Wcm). The films exhibit mobility up to 19.98 cm2/Vs that we associate to the technological process used.
Thin films of ZnO were successfully prepared on glass substrates with different thicknesses by sol-gel method by using zinc acetate dehydrate as precursor. The surface of thin films morphology from were studied by AFM micrographs, the structural prop
erties of the obtained ZnO thin film are studied using X-ray diffraction spectra and their elemental analysis by X-ray energy dispersion spectroscopy (EDX). Moreover, optical properties and emission of ZnO nano thin film were evaluate during ultraviolet-visible-infrared and photoluminescence spectra. The AFM investigations have revealed that the morphology of the films is smooth and homogeneous specially for the high thickness and the grains produced on the surface take the form of nano rods with an average diameter of 240nm. Structural analysis by X-ray diffraction showed that the deposited films have a preferred orientation along the direction (112) and are relatively uniform with average crystal size 19nm, while the EDX spectrum showed that the elemental composition of these films is zinc oxide. The spectrophotometer Ultraviolet -Visible confirms that it is possible to get good transparent ZnO films with a transmission of 77 to 92% in the infrared. The values of optical gaps Eg vary between 3.273 - 3.256 eV. The peak of photoluminescence exhibited a visible emission peak at 616nm that refers to possibility of using thin films as an effective medium of random laser.
In this work, multi-layer thin films (insulator - metal - insulator) were prepared on glass substrates. Where we deposited the following order of (zinc oxide - silver - zinc oxide) by magnetron sputtering of zinc oxide and vacuum thermal evaporation technique for silver.
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