In this research, measurement of radioactivity of bismuth-212 in the soil of the
village of the Ien Lailonin- Alhafah area- Latakia city using gamma spectrometry to make
sure the radioactive content to soil, and was measuring the radioactivity of b
ismuth-212
using the alpha spectroscopy, after digestion 10g of soil using nitric acid and sulfuric acid
concentrated, and then spontaneaous deposition into high purity a silver disc.
the results show that: the radioactivity of bismuth-212 (1,48Bq) using gamma
spectrometry and (2,05Bq)using the alpha spectroscopy It is within the range allowed
international border ,taking into account the errors in measurements.
Amount of dusts deposition were determined amount of dusts
deposition on Olives leafs and green houses in surrounding of
cement manufactory in Tarrtous. Concentrations Zn, Fe,Ni,Cu,Mn
Were determined. The results showed that dusts amount
demonstr
ates differ according to direction and distance of
manufactory. It decay whenever moving away excluding southwest.
It is signal to prospective finding another sources for
immersion . Iron was the highest concentration followed by Nickel,
Zinc and lastly copper. That a shows the contribution of cements
manufactory Emission in air pollution. Therefore compounds of
these elements fall down on components of ambient environment
inclusively Olives leafs and green houses.
The concentrations were determined of the most basic air pollutants
(SO2, H2S, CO, O3, NOx, TSP, PM10, PM2.5) in some vital areas in
the Tartous city of and its surroundings using a mobile unit to
measure air pollutants.
In the present paper, we discuss the influence of point defects on electrical and
optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD)
method on glass and silicon substrates at low temperature (100°C). Room temperatu
re
photoluminescence (RT PL) spectra, secondary ion mass spectroscopy (SIMS), and Hall
Effect measurements were made for as-grown ZnO layers. The annealing process was
performed in air as well as in N2 atmosphere at 400°C for half an hour. The long annealing
resulted in a larger reduction in electron concentration. Simultaneously, an evident
increase in carrier's mobility was observed, which may suggest that annealing resulted in a
decreased number of native defects in the ZnO layers. Also, it was observed that hydrogen
atoms in ZnO samples did not dominate their electrical properties with the increase of
electrons concentration.
We study the concentration of the defects created by the light from the measurement of the Fermi state displacement deduced from the conductivity variation with the temperature for samples of hydrogenated amorphous silicon (a-Si:H) deposited by Plasm
a Enhanced Chemical Vapor Deposition (PECVD). This study demonstrated that the value of the activation energy of the samples in the case of As-depos. indicate that the samples before the warm-up (as are upon receipt of these samples from the laboratory) partially exposed to light during the process of transportation and storage. Been explained the effect of light on this samples that it was returning to cut weak silicon bonds and then the creation of new dangling bonds. We also found that the samples containing less hydrogen are the most affected by the light which indicates the important role of hydrogen in the satisfaction of defects. Also found that samples which contain germanium by less dopant are most affected by light.
A study of surface chemical composition has been performed by using Auger Electron Spectroscopy (AES) for ZnO layers grown by Atomic Layer Deposition (ALD) procedure.Elements on surface of materials were identified,and, an atomic concentration of ele
ments on surface was determinate. Onlysmall amount of carbon or carbon compounds detected, easily removed by argon ion sputtering. Also, long argon ion sputtering partly depleted surface of oxygen.
In this paper, a proposal a chemical solvent to remove sulfur deposits within the tubes production of the wells that most suffer from this problem are done. Where the study was conducted on the referenced study about the characteristics and forms of
sulfur in the nature, and explain the Scheme phasic of sulfur and required conditions for the deposition of elemental sulfur within the tubes production. And has been clarified the mechanism of deposition and the outline of a simplified process for the nuclei of molecules from supersaturation sulfur vapor. Has also been depend on the field data of the studied wells /Jbissah-223, Jbissah-220/ (taken from the daily operational reports and Historical Biography of the wells), to conducting laboratory experiments in order to compare the between used solvent at field (NaOH) and proposed solvent (tallow amine activated diethyl disulfides) in this study in terms of the melt the deposited sulfur within the tubes production. and as a result, the curves resulting from the comparison process was drawn and recommending the use of the proposed solvent in treatment the acid gas wells in Jbissah fields that suffer from this problem where this solvent is the most effective and economical.
In this paper we present the structural, optical and electrical characteristics of ZnO thin films grown for different parameters by the atomic layer deposition (ALD) method. The films were grown on glass and silicon substrates at low temperatures. We
used diethyl-zinc (DEZn) and deionized water as zinc and an oxygen sources, respectively. Measurements of surface morphology, photoluminescence at room temperature (RT PL) and Hall Effect were made for ZnO layers. The films obtained at 130°C show the highest carrier concentration (1.1×1019 cm-3) and the lowest resistivity (2.84×10-2 Wcm). The films exhibit mobility up to 19.98 cm2/Vs that we associate to the technological process used.
In this paper we present the preparation of PbS nanocrystalline thin films
using Chemical Bath Deposition (CBD) technique. We have performed this
work in order to study the photoconductivity of PbS semi-conductor thin films.
The details of the pre
paration method are described. Thickness of deposited
films has been determined using mechanical and optical methods. From the
optical absorption measurements we have determined the band gap values.
Using the first approximation parabolic bands model and the obtained values
of band gaps, we have determined the size of PbS nanocrystallites. Also, we
have investigated the electrical and photoelectrical behaviors of the PbS films.
Our study shows that the size of PbS thin films nanocrystallites affects the
photoconductive properties of the material. Furthermore, investigations show
that there are two different sizes of grains located in two different layers, the
first one, with grain’s size of about 25nm, concerns the part of PbS deposited
directly on the glass substrate and the second layer, with grain’s size of about
70nm, concerns the PbS deposited on the first layer.
Aluminum alloys have got extreme industrial importance since 19th century
until now. They enter into several light and heavy industries. aluminum is
hardened by impurity due to industrial application. In this study, aluminumcupper
alloys (with 0.5
% Mg) were prepared, where cupper amount was added
to aluminum in different percentages (2.5%,4%,4.5%) ,no overtaking degree of
saturation 6% of the weight of cupper. After adding definite percentage of
cupper to aluminum, the compounds are fusioned for complete blending, where
cupper atoms diffuse into aluminum. Samples are infusioned by definite
methods and circumstances. The prepared alloys were thermally treated during
8-30 hours for hardening. In this research we will concentrate on the influence
of cupper content on hardening of aluminum and other basic conditions, which
are needed to obtain higher hardness for aluminum alloys.
