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Register a new userStatic and dynamic behavior study of silicon carbide Schottky and junction barrier Schottky diodes at high temperatures
دراسة السلوك الساكن و الحركي لثنائيات شوتكي و لثنائيات شوتكي ذات المتصل المصنوعة من كربيد السيلكون عند درجات الحرارة العالية
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Aِl-Baath University ورقة بحثية
Publication date
2018
fields
Electrical Power Engineering
and research's language is
العربية
Authors
رامي موسى( باحث )
Created by
Shamra Editor
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في هذا البحث قمنا بدراسة السلوك الساكن و الحركي لثنائيات شوتكي و لثنائيات شوتكي ذات المتصل المصنوعة من كربيد السيلكون. الهدف من هذه الدراسة هو في أداء و مميزات هذه العناصر في حالات العمل المتعددة و في شروط درجات الحرارة المرتفعة، بالإضافة إلى توضيح التمايز بين هذين النوعين من الثنائيات.
In this paper, we studied the static and dynamic behavior of the silicon carbide Schottky diodes and junction barrier Schottky diodes. The objective of this study is to understand the performance and characteristics of these devices in multiple working situations and in high temperature conditions, as well as to clarify the distinction between these two types of diodes.
References used
J.L. Hudgins; G.S. Simin; E. Santi, M.A. Khan, "An assessment of wide bandgap semiconductors for power devices," Power Electronics, IEEE Transactions on, vol.18, no.3, pp. 907-914, May 2003
C.E. Weitzel et al, "Silicon carbide high-power devices," Electron Devices, IEEE Transactions on , vol.43, no.10, pp.1732-1741, Oct 1996
L. Lorenz, "Power Semiconductor Devices-Development Trends and System Interactions", Power Conversion Conference - Nagoya, 2007, pp.348-354
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