We present a PC controlled apparatus, we have built up to measure
automatically forward electrical characteristics and capacity versus voltage
characteristics, of schottky diodes. Methods used to extract electrical
parameters of these diodes (leak
age current, Schottky barrier height and
substrat doping concentration) are described. These methods were applied to a
commercial Schottky diode, used as Alpha particles detector (surface barrier
detector), and the obtained results were compatible with the expected ones.
In this paper, we studied the static and dynamic behavior of the
silicon carbide Schottky diodes and junction barrier Schottky diodes. The
objective of this study is to understand the performance and
characteristics of these devices in multiple working situations and in high
temperature conditions, as well as to clarify the distinction between these
two types of diodes.
