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Optical and Structural Properties of Thermally Evaporated CdTe Thin Films

الخواص الضوئية و البنيوية لأغشية الكادميوم تيلورايد (CdTe) المرسبة بالتبخير الحراري

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 Publication date 2010
  fields Physics
and research's language is العربية
 Created by Shamra Editor




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CdTe Thin films were deposited on silicon substrates by thermal evaporation method. The geometric thickness was calculated using interferometric method based on reflectance curve recorded with the spectrophotometer. The Reflection of High-Energy Electron Diffraction (RHEED) patterns and XRD analysis reveals that the structure of the films are polycrystalline with preferential orientation (111). The structure constant (a), crystallite size (D), dislocation density (δ) and strain (ε) were calculated, and it is observed that the crystallite size increases but micro-strain and dislocation density decreases with increases in thin film thickness. The composition of the samples was determined by Energy Dispersive X-ray Analysis (EDX) and it is found that the wt.% of Cd increases and the wt.% of Te decreases with the increases of film thickness due to the re-evaporation of Te.

References used
S. Lalitha, S. Zh. Karazhanov, P. Ravindran, S. Senthilarasu and all…., (2007). Electronic structure, structural and optical properties of thermally evaporated CdTe thin films. Physica B, V. 387, pp. 227-238
I. ASAAD. (2009). Shot Noise in Macroscopic CdTe Resistors: Experemental Evidence and Analytical Study, Eur. Phys. J. Appl. Phys, V. 45, pp. 10303p1-10303p3
E. R. Shaaban, N. Afify, El-Taher. (2009). Effect of film thickness on microstructure parameters and optical constants of CdTe thin films, Journal of Alloys and Compounds, V. 482, pp. 400-404
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CdTe Thin films were deposited on glass substrates by thermal evaporation method. The geometric thickness was calculated using interferometric method based on reflectance curve recorded with the spectrophotometer. The XRD analysis and optical char acterizations of CdTe films with different optical thicknesses reveals that the structure of the films is polycrystalline with preferential orientation (111). The structure constant (a), crystallite size (D), dislocation density (δ) and strain (ε) were calculated, and it is observed that the crystallite size increases but micro-strain and dislocation density decreases with increases in thin film thickness. The overall absorbance has been increased with the film thickness and the direct band gap was obtained. It decreases with the increase in the thickness of the films.
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