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Register a new userProposed Correction of Calculated physical Quantities for Multi-Layer Thin Films (One-Dimensional Photonic Crystals)
تصحيحات مقترحة على علاقات الخواص الفيزيائية لأغشية رقيقة متعددة الطبقات من مواد عازلة
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Damascus University ورقة بحثية
Publication date
2013
fields
Physics
and research's language is
العربية
Authors
مجد حماد( باحث )
Created by
Shamra Editor
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تحظى الأدوات الضوئية المفيدة في مجال التحكم بمعاملات النفوذ و الانعكاس، مثل الأغشية الرقيقة متعددة الطبقات، و البلورات الفوتونية، و بنى براغ المختلفة على صورة قوالب أو أغشية رقيقة متعددة الطبقات بأهمية كبيرة في مجال العلوم الضوئية الطيفية.
There has been much interest in photonic and spectroscopic devices that are useful for controlling transmission and reflection coefficients such as multilayer thin films, photonic crystals, and various Bragg structures in the form of molds or multilayer thin films.
References used
Joannpoulos, J. D, Meade R. D, Winn J. N. (2008). 2nd Ed, Molding the flow of light, Photonic Crystals, Princeton university press
Inou K, Ohtaka K. (2004). Photonic crystals, Physics Fabrication and Application
Ecole de Palmyre, Optical applications of thin films, Bruno PALPANT, Laboratoire d’Optique des Solides, (CNRS, February 2003) - Université Pierre et Marie Curie Paris
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Photonic crystals is a low-loss periodic medium with periodic changes of
refractive index, which is used to control the light.
Theoretically, Photonic crystals can be studied using Maxwell equations, but
it’s difficult to find a general analytical
solution for these equations, since we
are dealing with vectors. So we resort to the numerical solutions for Maxwell’s
equations to calculate the reflection and transmission coefficients and the
Photonic band gap.
CdTe Thin films were deposited on silicon substrates by thermal
evaporation method. The geometric thickness was calculated using
interferometric method based on reflectance curve recorded with the
spectrophotometer. The Reflection of High-Energy E
lectron Diffraction
(RHEED) patterns and XRD analysis reveals that the structure of the films are
polycrystalline with preferential orientation (111). The structure constant (a),
crystallite size (D), dislocation density (δ) and strain (ε) were calculated, and it
is observed that the crystallite size increases but micro-strain and dislocation
density decreases with increases in thin film thickness. The composition of the
samples was determined by Energy Dispersive X-ray Analysis (EDX) and it is
found that the wt.% of Cd increases and the wt.% of Te decreases with the
increases of film thickness due to the re-evaporation of Te.
In this paper we present the structural, optical and electrical characteristics of ZnO thin films grown for different parameters by the atomic layer deposition (ALD) method. The films were grown on glass and silicon substrates at low temperatures. We
used diethyl-zinc (DEZn) and deionized water as zinc and an oxygen sources, respectively. Measurements of surface morphology, photoluminescence at room temperature (RT PL) and Hall Effect were made for ZnO layers. The films obtained at 130°C show the highest carrier concentration (1.1×1019 cm-3) and the lowest resistivity (2.84×10-2 Wcm). The films exhibit mobility up to 19.98 cm2/Vs that we associate to the technological process used.
This paper contains the following concepts: definitions about polaron, concepts of
polarons, large polaron, small polaron, and development of quantum theory for electron
self-action potential in a system consisting of three contact different semi-c
onductor thin
layers, finding polaron potential energy, and studying the case in which an electron is
located inside the thin layer or on its surface. Studying the effect of dielectric anisotropy of
layers on electron-(hole) potential energy in the above mentioned thin layers.
AFM has been used to get microscopic information of the surface structure
and to plot topographies representing the surface relief. AFM technique can be
used to visualize the surface relief, specify the growth of thin films, and
determine Height parameters.
الخشونة
التموج
جذر متوسط مربع الارتفاعات
العزم الإحصائي الثالث
الانحراف عن التناظر
العزم الإحصائي الرابع
وصف التفلطح
المتوسط الحسابي للارتفاعات
كثافة القمم
المتوسط الحسابي لانحناءات القمم
(Roughness (R
(Waviness (W
(Root Mean Square height (RMS
Surface Skewness
Surface Kurtosis
Arithmetical mean height
Density of peaks and Arithmetic mean peak curvature
المزيد..
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