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The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a pheno
A study of 3D pixel sensors of cell size 50 {mu}m x 50 {mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly,
The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing inf
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{div}2 10^16 1-
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures