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Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

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 نشر من قبل Francesco Moscatelli
 تاريخ النشر 2016
  مجال البحث فيزياء
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In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.



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