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We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing read-out of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibra
We propose a technique to initialize an electron spin in a semiconductor quantum dot with a single short optical pulse. It relies on the fast depletion of the initial spin state followed by a preferential, Purcell-accelerated desexcitation towards th
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for ra
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement o
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglemen