ﻻ يوجد ملخص باللغة العربية
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibra
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correla
We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The