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We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a triple quantum dot potential. We are able to tune the tunnelling times over around three orders of magnitude. We obtain a spin relaxation time of 300 microseconds at 10T.
We study the electronic waiting time distributions (WTDs) in a non-interacting quantum dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using scattering matrix approach. Since the quantum
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correla
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement o
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for ra
We propose a technique to initialize an electron spin in a semiconductor quantum dot with a single short optical pulse. It relies on the fast depletion of the initial spin state followed by a preferential, Purcell-accelerated desexcitation towards th