ﻻ يوجد ملخص باللغة العربية
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $mathbf{kcdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
We use polarization-resolved Raman scattering to study lattice dynamics in NaFe$_{0.53}$Cu$_{0.47}$As single crystals. We identify 4 $A_{1g}$ phonon modes at 125, 172, 183 and 197 cm$^{-1}$, and 4 $B_{3g}$ phonon modes at 101, 138, 173, 226 cm$^{-1}$
The parent compounds of iron-based superconductors are magnetically-ordered bad metals, with superconductivity appearing near a putative magnetic quantum critical point. The presence of both Hubbard repulsion and Hunds coupling leads to rich physics
We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, th
Experiments on resonances of conduction electrons in InGaAs/InAlAs double quantum wells at megagauss magnetic fields in the Faraday geometry are reported. We observe new cyclotron resonances assisted by emission of InAs-like and GaAs-like optic phono