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Experiments on resonances of conduction electrons in InGaAs/InAlAs double quantum wells at megagauss magnetic fields in the Faraday geometry are reported. We observe new cyclotron resonances assisted by emission of InAs-like and GaAs-like optic phonons and a combined (cyclotron-spin) resonance assisted by emission of InAs-like phonon. The observations are very well described for three laser frequencies with the use of an eight-band (three level) $textbf{k}cdot textbf{p}$ model, taking into account position- and energy-dependent effective masses and spin g-factors. It is indicated that the new observations are possible due to the application very high magnetic fields.
We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {it DX} centers. The excitation mechanism of the {it DX} centers into their shallow donor state was r
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band
We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling u =1 as a function of the t
Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with perio
Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When e