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We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant polarization and an increase in coercive voltage of the FE-DE stack with an increase in TDE. Using phase-field simulations, we show that an increase in TDE results in a larger number of reverse domains in the FE layer to suppress the depolarization field, which leads to a decrease in remanent polarization and an increase in coercive voltage. Further, the applied voltage-driven polarization switching suggests domain-nucleation dominant characteristics for low TDE, and domain-wall motion-induced behavior for higher TDE. In addition, we show that the hysteretic charge-voltage characteristics of the FE layer in the FE-DE stack exhibit a negative slope region due to the multi-domain polarization switching in the FE layer. Based on our analysis, the trends in charge-voltage characteristics of the FE-DE stack with respect to different TDE (which are out of the scope of single-domain models) can be described well with multi-domain polarization switching mechanisms.
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage measurements. The thi
The particle-in-cell simulation is applied to study a nanometer-sized dielectric particle lofting from a dielectric substrate exposed to a low energy electron beam. The article discusses the electron accumulation between such a substrate and a partic
Electromagnetic response of dielectric resonators with high refractive index is governed by optically induced electric and magnetic Mie resonances facilitating confinement of light with the amplitude enhancement. However, strong subwavelength trappin
The formation of breakdown pattern on an insulating surface under the influence of a transverse magnetic field is theoretically investigated. We have generalized the Dielectric Breakdown Model (DBM) for the case of external magnetic field. Concept of
We show that global lower bounds to the mode volume of a dielectric resonator can be computed via Lagrangian duality. State-of-the-art designs rely on sharp tips, but such structures appear to be highly sub-optimal at nanometer-scale feature sizes, a