ترغب بنشر مسار تعليمي؟ اضغط هنا

Continuous-wave versus time-resolved measurements of Purcell-factors for quantum dots in semiconductor microcavities

366   0   0.0 ( 0 )
 نشر من قبل Signe Seidelin
 تاريخ النشر 2009
  مجال البحث فيزياء
والبحث باللغة English
 تأليف M. Munsch




اسأل ChatGPT حول البحث

The light emission rate of a single quantum dot can be drastically enhanced by embedding it in a resonant semiconductor microcavity. This phenomenon is known as the Purcell effect, and the coupling strength between emitter and cavity can be quantified by the Purcell factor. The most natural way for probing the Purcell effect is a time-resolved measurement. However, this approach is not always the most convenient one, and alternative approaches based on a continuous-wave measurement are often more appropriate. Various signatures of the Purcell effect can indeed be observed using continuous-wave measurements (increase of the pump rate needed to saturate the quantum dot emission, enhancement of its emission rate at saturation, change of its radiation pattern), signatures which are encountered when a quantum dot is put on-resonance with the cavity mode. All these observations potentially allow one to estimate the Purcell factor. In this paper, we carry out these different types of measurements for a single quantum dot in a pillar microcavity and we compare their reliability. We include in the data analysis the presence of independent, non-resonant emitters in the microcavity environment, which are responsible for a part of the observed fluorescence.

قيم البحث

اقرأ أيضاً

Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr ro tation in the regime of resonant spin amplification (based on pulsed excitation) provide a complementary measure of electron spin relaxation time. Influence of electron localization on long-lived spin coherence is examined by means of spectral and temperature dependencies. Various scenarios of spin polarization generation (via the trion and exciton states) are analyzed and difference between continuous-wave and pulsed excitations is considered. Effects related to inhomogeneous distribution of $g$-factor and anisotropic spin relaxation time on measured quantities are discussed.
We revisit Mandels notion that the degree of coherence equals the degree of indistinguishability by performing Hong-Ou-Mandel- (HOM-)type interferometry with single photons elastically scattered by a cw resonantly driven excitonic transition of an In As/GaAs epitaxial quantum dot. We present a comprehensive study of the temporal profile of the photon coalescence phenomenon which shows that photon indistinguishability can be tuned by the excitation laser source, in the same way as their coherence time. A new figure of merit, the coalescence time window, is introduced to quantify the delay below which two photons are indistinguishable. This criterion sheds new light on the interpretation of HOM experiments under cw excitation, particularly when photon coherence times are longer than the temporal resolution of the detectors. The photon indistinguishability is extended over unprecedented time scales beyond the detectors response time, thus opening new perspectives to conducting quantum optics with single photons and conventional detectors.
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effe ctive g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin-orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic-field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of $Delta_{so}sim 180$ $mu$eV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in deta il. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.
194 - S. Portolan 2006
Recently the possibility of generating nonclassical polariton states by means of parametric scattering has been demonstrated. Excitonic polaritons propagate in a complex interacting environment and contain real electronic excitations subject to scatt ering events and noise affecting quantum coherence and entanglement. Here we present a general theoretical framework for the realistic investigation of polariton quantum correlations in the presence of coherent and incoherent interaction processes. The proposed theoretical approach is based on the {em nonequilibrium quantum Langevin approach for open systems} applied to interacting-electron complexes described within the dynamics controlled truncation scheme. It provides an easy recipe to calculate multi-time correlation functions which are key-quantities in quantum optics. As a first application, we analyze the build-up of polariton parametric emission in semiconductor microcavities including the influence of noise originating from phonon induced scattering.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا