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A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototyping of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported.
In this paper, an architecture designed for electrical measurement of the quality factor of MEMS resonators is proposed. An estimation of the measurement performance is made using PSPICE simulations taking into account the components non-idealities.
A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFE
The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfi
The effect of mechanical fatigue on structural performances of gold devices is investigated. The pull-in voltage of special testing micro-systems is monitored during the cyclical load application. The mechanical collapse is identified as a dramatic l
This paper presents one MEMS design tool with total six design flows, which makes it possible that the MEMS designers are able to choose the most suitable design flow for their specific devices. The design tool is divided into three levels and interc