The methodology used to obtain the values of the spin-orbit couplings from the spin expectation values from perturbation theory was incorrect. As a result Figs. 2 and 3 are incorrect.
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which leads to sp
in relaxation by the Dyakonov-Perel mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.
The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at the $K(K)$-p
oint of the magnitude of 24 $mu$eV (0.28 K). This intrinsic splitting comes 96% from the usually neglected $d$ and higher orbitals. The electric field induces an additional (extrinsic) Bychkov-Rashba-type splitting of 10 $mu$eV (0.11 K) per V/nm, coming from the $sigma$-$pi$ mixing. A mini-ripple configuration with every other atom is shifted out of the sheet by less than 1% differs little from the intrinsic case.
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenom
enological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser {it et al.}, Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated.
Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves can vanis
h in non-collinear magnetic configurations, and such a non-standard behavior of the torque is generally associated with a non-monotonic angular dependence of the giant magnetoresistance, with a global minimum at a non-collinear magnetic configuration.
Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic c
ontrol of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects.
Spin-transfer torque in asymmetric spin valves can destabilize both parallel and antiparallel configurations and can lead to precessional modes also in the absence of an external magnetic field. We find a bistable precessional regime in such systems
and show that thermal fluctuations can excite transitions (telegraph noise) between the corresponding oscillatory regimes that are well separated by irreversible paths at low temperatures. Because of the thermally induced transitions, the frequency of the resulting current-driven oscillations is different from that obtained at very low temperatures. We also show that the power spectrum in the bistable region is dominated by the out-of-plane oscillatory mode.
