اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin-orbit fields in ferromagnetic metal/semiconductor junctions
427
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The methodology used to obtain the values of the spin-orbit couplings from the spin expectation values from perturbation theory was incorrect. As a result Figs. 2 and 3 are incorrect.
قيم البحث
اقرأ أيضاً
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exch
ange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have
to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this work, based on half-metallic magnets and spin-gapless semiconductors we propose a diode concept that does not have a junction barrier and the operation principle of which relies on the spin-dependent transport properties of the HMM and SGS materials. We show that the HMM and SGS materials form an Ohmic contact under any finite forward bias, while for a reverse bias the current is blocked due to spin-dependent filtering of the electrons. Thus, the HMM-SGS junctions act as a diode with zero threshold voltage $V_T$, and linear $I-V$ characteristics as well as an infinite on:off ratio at zero temperature. However, at finite temperatures, non-spin-flip thermally excited high-energy electrons as well as low-energy spin-flip excitations can give rise to a leakage current and thus reduce the on:off ratio under a reverse bias. Furthermore, a zero threshold voltage allows one to detect extremely weak signals and due to the Ohmic HMM-SGS contact, the proposed diode has a much higher current drive capability and low resistance, which is advantageous compared to conventional semiconductor diodes. We employ the NEGF method combined with DFT to demonstrate the linear $I-V$ characteristics of the proposed diode based on two-dimensional half-metallic Fe/MoS$_2$ and spin-gapless semiconducting VS$_2$ planar heterojunctions.
The two-dimensional kagome lattice hosts Dirac fermions at its Brillouin zone corners K and K, analogous to the honeycomb lattice. In the density functional theory electronic structure of ferromagnetic kagome metal Fe$_3$Sn$_2$, without spin-orbit co
upling we identify two energetically split helical nodal lines winding along $z$ in the vicinity of K and K resulting from the trigonal stacking of the kagome layers. We find that hopping across A-A stacking introduces a layer splitting in energy while that across A-B stacking controls the momentum space amplitude of the helical nodal lines. The effect of spin-orbit coupling is found to resemble that of a Kane-Mele term, where the nodal lines can either be fully gapped to quasi-two-dimensional massive Dirac fermions, or remain gapless at discrete Weyl points depending on the ferromagnetic moment orientation. Aside from numerically establishing Fe$_3$Sn$_2$ as a model Dirac kagome metal, our results provide insights into materials design of topological phases from the lattice point of view, where paradigmatic low dimensional lattice models often find realizations in crystalline materials with three-dimensional stacking.
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers a
re magnetized orthogonal to each other. Measurements carried out for different post-growth annealing conditions and spacer layer thickness suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.
We present Maxwell equations with source terms for the electromagnetic field interacting with a moving electron in a spin-orbit coupled semiconductor heterostructure. We start with the eight--band ${bm k}{bm p}$ model and derive the electric and magn
etic polarization vectors using the Gordon--like decomposition method. Next, we present the ${bm k}{bm p}$ effective Lagrangian for the nonparabolic conduction band electrons interacting with electromagnetic field in semiconductor heterostructures with abrupt interfaces. This Lagrangian gives rise to the Maxwell equations with source terms and boundary conditions at heterointerfaces as well as equations for the electron envelope wave function in the external electromagnetic field together with appropriate boundary conditions. As an example, we consider spin--orbit effects caused by the structure inversion asymmetry for the conduction electron states. We compute the intrinsic contribution to the electric polarization of the steady state electron gas in asymmetric quantum well in equilibrium and in the spin Hall regime. We argue that this contribution, as well as the intrinsic spin Hall current, are not cancelled by the elastic scattering processes.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
