We present measurements of a topological property, the Chern number ($C_mathrm{1}$), of a closed manifold in the space of two-level system Hamiltonians, where the two-level system is formed from a superconducting qubit. We manipulate the parameters o
f the Hamiltonian of the superconducting qubit along paths in the manifold and extract $C_mathrm{1}$ from the nonadiabitic response of the qubit. By adjusting the manifold such that a degeneracy in the Hamiltonian passes from inside to outside the manifold, we observe a topological transition $C_mathrm{1} = 1 rightarrow 0$. Our measurement of $C_mathrm{1}$ is quantized to within 2 percent on either side of the transition.
We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics
are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.
We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe
the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g_c/2pi ~ 17 MHz.
Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a quantum bus, enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics archi
tecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.
We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 micro
ns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rota
tions of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominall
y defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We develo
ped hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).
