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تسجيل مستخدم جديدStructural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition
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We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.
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