CdTe Thin films were deposited on silicon substrates by thermal
evaporation method. The geometric thickness was calculated using
interferometric method based on reflectance curve recorded with the
spectrophotometer. The Reflection of High-Energy E
lectron Diffraction
(RHEED) patterns and XRD analysis reveals that the structure of the films are
polycrystalline with preferential orientation (111). The structure constant (a),
crystallite size (D), dislocation density (δ) and strain (ε) were calculated, and it
is observed that the crystallite size increases but micro-strain and dislocation
density decreases with increases in thin film thickness. The composition of the
samples was determined by Energy Dispersive X-ray Analysis (EDX) and it is
found that the wt.% of Cd increases and the wt.% of Te decreases with the
increases of film thickness due to the re-evaporation of Te.
