This research is a theoretical study for the scattering mechanism of the charge carrier in the transport tunnels of system consisting of metal-insulator- semiconductor (MIS)- When the insulator is polarized where the conductivity of surface for semic
onductor polarization behavior due to charge transfer during interfaces. The aim of this research is to investigate the effect of self-action and polarization potentials on the ground state of electron- polaron in semiconductor layer by means of is olating the Schrodinger equation and discussion of some special cases such as the potential is triangular form (case of contact metal – semiconductor).
This paper contains the following concepts: definitions about polaron, concepts of
polarons, large polaron, small polaron, and development of quantum theory for electron
self-action potential in a system consisting of three contact different semi-c
onductor thin
layers, finding polaron potential energy, and studying the case in which an electron is
located inside the thin layer or on its surface. Studying the effect of dielectric anisotropy of
layers on electron-(hole) potential energy in the above mentioned thin layers.
