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Register a new userSuperconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
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Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdorfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
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High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this Letter, we demonstrate an optimized fabrication of dually-resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17,000%/W is obtained in the low power regime and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.
We investigated the impact of surface oxygen on the ion yield for He$^+$ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion spectra for different oxidation stages and different primary energies were recorded. A comparison of ion yields normalized to the differential scattering cross section as well as experimental factors allows obtaining information about the influence of oxygen on charge exchange processes. The decrease in the ion yield of both metals with exposure cannot be explained by different surface coverages exclusively, but requires the neutralization efficiency to be dependent on the chemical structure of the surface. For Ta, additionally, a different energy dependency of the ion yield obtained in the metal and oxide occurs. The ion yield for O shows in both surfaces a significantly weaker energy dependency than the investigated metals.
The mechanical responses of single crystalline Body-Centered Cubic (BCC) metals, such as molybdenum (Mo), outperform other metals at high temperatures, so much so that they are considered as excellent candidates for applications under extreme conditions, such as the divertor of fusion reactors. The excellent thermomechanical stability of molybdenum at high temperatures (400-1000$^{rm o}$C) has also been detected through nanoindentation, pointing towards connections to emergent local dislocation mechanisms related to defect nucleation. In this work, we carry out a computational study of the effects of high temperature on the mechanical deformation properties of single crystalline Mo under nanoindentation. Molecular dynamics (MD) simulations of spherical nanoindentation are performed at two indenter tip diameters and crystalline sample orientations [100], [110], and [111], for the temperature range of 10-1000K. We investigate how the increase of temperature influences the nanoindentation process, modifying dislocation densities, mechanisms, atomic displacements and also, hardness, in agreement with reported experimental measurements. Our results suggest that the characteristic formation and high-temperature stability of [001] dislocation junctions in Mo during nanoindentation, in contrast to other BCC metals, may be the cause of the persistent thermomechanical stability of Mo.
Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even for the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurement on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even for the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences for trilayer GaSe. We further found that the AB-type stacking is more stable than the AA-type stacking in GaSe.
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature.
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