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Register a new userNeutralization of slow helium ions scattered from single crystalline aluminum and tantalum surfaces and their oxides
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We investigated the impact of surface oxygen on the ion yield for He$^+$ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion spectra for different oxidation stages and different primary energies were recorded. A comparison of ion yields normalized to the differential scattering cross section as well as experimental factors allows obtaining information about the influence of oxygen on charge exchange processes. The decrease in the ion yield of both metals with exposure cannot be explained by different surface coverages exclusively, but requires the neutralization efficiency to be dependent on the chemical structure of the surface. For Ta, additionally, a different energy dependency of the ion yield obtained in the metal and oxide occurs. The ion yield for O shows in both surfaces a significantly weaker energy dependency than the investigated metals.
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Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdorfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
Electron and energy transfer processes between an atom or molecule and a surface are extremely important for many applications in physics and chemistry. Therefore a profound understanding of these processes is essential in order to analyze a large variety of physical systems. The microscopic description of the two-electron Auger processes, leading to neutralization/ionization of an ion/neutral atom in front of a solid surface, has been a long-standing problem. It can be dated back to the 1950s when H. D. Hagstrum proposed to use the information contained in the spectrum of the electrons emitted during the neutralization of slow noble gas ions as a surface analytical tool complementing photoelectron spectroscopy. However, only recently a comprehensive description of the Auger neutralization mechanism has been achieved by the combined efforts of theoretical and experimental methods. In this article we review the theoretical models for this problem, stressing how their outcome compare with experimental results. We also analyze the inverse problem of Auger ionization. We emphasize the understanding of the key quantities governing the processes and outline the challenges remaining. This opens new perspectives for future developments of theoretical and experimental work in this field.
Hexaferrite materials are highly demanded to develop and manufacture electronic devices operating at radio- and microwave frequencies. In the light of the prospects for their use in the forthcoming terahertz electronics, here, we present our results on the terahertz and infrared dielectric response of a typical representative of hexaferrites family, lead-substituted M-type barium hexaferrite doped with aluminum, Ba0.2Pb0.8AlxFe12-xO19, x(Al)=0.0, 3.0, and 3.3. We studied uniquely large and high-quality single crystals of the. Systematic and detailed investigations of the dependences of terahertz-infrared (frequencies 8 - 8000 cm-1) spectra of complex dielectric permittivity on the temperature, 4 - 300 K, and on the chemical composition, x(Al)=0.0, 1.2, 3.0, 3.3, were performed for polarizations of the electric field E-vector of the probing radiation normal and parallel to the crystallographic c-axis. A number of resonance absorption bands are discovered at infrared-terahertz frequencies and assigned to polar phonons and transitions between energy levels of the fine-structured ground state of Fe2+ (5E) ions. In contrast to undoped BaFe12O19, no softening of the lowest frequency A2u phonon is observed, indicating suppression of a displacive phase transition in substituted compounds. Basing on dielectric data and detailed X-ray experiments, we find that for all concentrations of Al3+ ions, x(Al)=0.0, 1.2, 3.0, and 3.3, they mainly occupy the 2a and 12k octahedral site positions and that the degree of substitution of iron in tetrahedral positions is not substantial. Along with fundamental findings, the obtained data on broad-band dielectric properties of Ba0.2Pb0.8AlxFe12-xO19 crystals provides the information that can be used for development and manufacture of electronic devices with operating frequencies lying in the terahertz spectral band.
We study the time-dependent neutralization of a slow highly charged ion that penetrates a hexagonal hollow-centred graphene nanoflake. To compute the ultrafast charge transfer dynamics, we apply an effective Hubbard nanocluster model and use the method of nonequilibrium Green functions (NEGF) in conjunction with an embedding self-energy scheme which allows one to follow the temporal changes of the number of electrons in the nanoflake. We perform extensive simulations of the charge transfer dynamics for a broad range of ion charge states and impact velocities. The results are used to put forward a simple semi-analytical model of the neutralization dynamics that is in very good agreement with transmission experiments, in which highly charged xenon ions pass through sheets of single-layer graphene.
We propose a method to decompose the total energy of a supercell containing defects into contributions of individual atoms, using the energy density formalism within density functional theory. The spatial energy density is unique up to a gauge transformation, and we show that unique atomic energies can be calculated by integrating over Bader and charge-neutral volumes for each atom. Numerically, we implement the energy density method in the framework of the Vienna ab initio simulation package (VASP) for both norm-conserving and ultrasoft pseudopotentials and the projector augmented wave method, and use a weighted integration algorithm to integrate the volumes. The surface energies and point defect energies can be calculated by integrating the energy density over the surface region and the defect region, respectively. We compute energies for several surfaces and defects: the (110) surface energy of GaAs, the mono-vacancy formation energies of Si, the (100) surface energy of Au, and the interstitial formation energy of O in the hexagonal close-packed Ti crystal. The surface and defect energies calculated using our method agree with size-converged calculations of the difference between the total energies of the system with and without the defect. Moreover, the convergence of the defect energies with size can be found from a single calculation.
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