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Register a new userPolytypism in Few-Layer Gallium Selenide
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Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even for the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurement on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even for the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences for trilayer GaSe. We further found that the AB-type stacking is more stable than the AA-type stacking in GaSe.
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Here, the synthesis of Molybdenum Disulphide (MoS2) flakes by means of anodic atmospheric arc discharge is reported for the first time. The vertical electrode configuration consisted of a compound anode (hollow graphite anode filled with MoS2 powder) and a solid graphite cathode placed just above of the compound anode. Arc processes were operated in pulsed mode to preferentially evaporate the powder component from the anode and to minimize Carbon ablation. Pulsed anodic arc discharges were conducted at 2 Hz and 10% duty cycle in 300 Torr of Helium with a peak current of 250-300 A and peak voltage of 35 V. A probe made of Tungsten wire was placed in the vicinity of the arc column to collect the evaporated material. The measured thickness profile was correlated to the particle flux distribution and it was fitted by a simple model of plasma expansion. During pulse phase, electron density was estimated around 5E22 m-3 or higher, and ion current density was of the order of 10 A/mm2. Morphology, structure and composition of the samples were characterized by Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray diffraction (XRD). The study shows that pulsed arc discharge of the compound anode leads to moderate C deposition combined with MoS2 deposition in the form of fragmented nanocrystals and few atomic monolayers of MoS2. Such synthesis technique is promising to produce new 2D nanomaterials with tailored structure and functionality thanks to the flexibility of pulsed power.
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdorfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
A single atomic slice of {alpha}-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree of freedom, we unexpectedly discover superconductivity in few-layer stanene down to a bilayer grown on PbTe, while bulk {alpha}-tin is not superconductive. Through substrate engineering, we further realize a transition from a single-band to a two-band superconductor with a doubling of the transition temperature. In-situ angle resolved photoemission spectroscopy (ARPES) together with first-principles calculations elucidate the corresponding band structure. Interestingly, the theory also indicates the existence of a topologically nontrivial band. Our experimental findings open up novel strategies for constructing two-dimensional topological superconductors.
The two-dimensional semiconductor MoS2 in its mono- and few-layer form is expected to have a significant exciton binding energy of several 100 meV, leading to the consensus that excitons are the primary photoexcited species. Nevertheless, even single layers show a strong photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating efficient charge carrier photogeneration (CPG). Here we use continuous wave photomodulation spectroscopy to identify the optical signature of long-lived charge carriers and femtosecond pump-probe spectroscopy to follow the CPG dynamics. We find that intitial photoexcitation yields a branching between excitons and charge carriers, followed by excitation energy dependent hot exciton dissociation as an additional CPG mechanism. Based on these findings, we make simple suggestions for the design of more efficient MoS2 photovoltaic and photodetector devices.
Long-range magnetic orders in atomically thin ferromagnetic CrI3 give rise to new fascinating physics and application perspectives. The physical properties of two-dimensional (2D) ferromagnetism CrI3 are significantly influenced by interlayer spacing and stacking order, which are sensitive to the hydrostatic pressure and external environments. However, there remains debate on the stacking order at low temperature. Here, we study the interlayer coupling and stacking order of non-encapsulated 2-5 layer and bulk CrI3 at 10 K by Raman spectroscopy; demonstrate a rhombohedral stacking in both antiferromagnetic and ferromagnetic CrI3. The opposite helicity dependence of Ag and Eg modes arising from phonon symmetry further validate the rhombohedral stacking. An anomalous temperature-dependent behavior is observed due to spin-phonon coupling below 60 K. Our work provides insights into the interlayer coupling and stacking orders of 2D ferromagnetic materials.
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