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A Crossbar Network for Silicon Quantum Dot Qubits

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 Added by Ruoyu Li
 Publication date 2017
  fields Physics
and research's language is English




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The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.



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We investigate capacitively coupled two-qubit quantum gates based on quantum dots. For exchange-only coded qubits electron spin $S$ and its projection $S_z$ are exact quantum numbers. Capacitive coupling between qubits, as distinct from interqubit exchange, preserves these quantum numbers. We prove, both analytically and numerically, that conservation of the spins of individual qubits has dramatic effect on performance of two-qubit gates. By varying the level splittings of individual qubits, $J_a$ and $J_b$, and the interqubit coupling time $t$, we can find an infinite number of triples $(J_a, J_b, t)$ for which the two-qubit entanglement, in combination with appropriate single-qubit rotations, can produce an exact CNOT gate. This statement is true for practically arbitrary magnitude and form of capacitive interqubit coupling. Our findings promise a large decrease in the number of nonlocal (two-qubit) operations in quantum circuits.
Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information.
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their operating range is limited and prone to electrical disturbances. Here we demonstrate realtime operation of a charge sensor in a feedback loop to maintain its sensitivity suitable for fast charge sensing in a Si/SiGe double quantum dot. Disturbances to the charge sensitivity, due to variation of gate voltages for operating the quantum dot and $1/f$ charge fluctuation, are compensated by a digital PID controller with the bandwidth of $approx 100,{rm kHz}$. The rapid automated tuning of a charge sensor enables unobstructed charge stability diagram measurement facilitating realtime quantum dot tuning and submicrosecond single-shot spin readout without compromising the performance of a charge sensor in time-consuming experiments for quantum information processing.
Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi-Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin-photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin-photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin-photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.
Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. We review here some key properties of the materials that have a direct impact on qubit performance and variability.
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