Preparing pure thin films from poly vinyl chloride and studying the effect of the rotating velocity on the optical constants

In this research we have prepared thin films from poly vinyl chloride (PVC) by spin coating technique in three velocities (1000,2000,3000)RPM on glass substrate (Micro scope cover glass), at room temperature. The absorbance A, and transmittance T for the films were studied in the visible and ultra-violet region (UV-VIS). In addition,we have calculated the absorbance coefficient α, skin depth δ, refractive index no, dielectric constant ε (the real part and the imaginary part), also we have calculated the energy band gap of allowed and forbidden direct transitions. The films showed high transmittance (80-90)%, in the infrared region as a function of the spinning velocity and took the maximum value 80% for the velocity 1000RPM, and 90% for the velocity 3000RPM, and the refractive index was decreased with the velocity increase, we found it between3.67 and 4.56 for the velocities 3000RPM and 1000RPM respectively. Whereas the skin depth δ decreased with the increasing of velocity, the minimum value was 0.0000531cm for the velocity 3000RPM and the maximum value was almost 0.00023cm for the velocity 1000RPM.

Studying effect of doping Mn on the structural properties of tin oxide thin films deposited by spray pyrolysis

Mn doped tin oxide transparent conducting thin films were deposited at a substrate temperature of 450°C by spray pyrolysis method. Structural properties of the films were investigated as a function of various Mn-doping levels (0, 1, 3, 5, 7 wt%) while all other deposition parameters such as substrate temperature, spray rate, carrier gas pressure and distance between spray nozzle to substrate were kept constant.

The effect of the self action potential energy of charge carrier located in isotropic layer on the energy gape in lead iodide layer

In this work, the effect of electric permittivity and thin layer thickness on the energy gape has been studied in a system consisting of three thin layers by means of finding the self action potential of charge carrier located in the central layer of this system. Then, the self action potential energy has been found by solving Schrödinger equation at the extracted potential. This study shows that energy gape of PbI2 decreases with layer thickness while it increases/decreases according to comparison between dielectric permittivity values of central layer and counterparts of two neighborhood layers on both sides.