ﻻ يوجد ملخص باللغة العربية
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as sigma (n_s,T,B=0)=sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in sigma with increasing B, followed by a much weaker sigma (B). At higher n_s, the initial drop of MC is less pronounced.
The temperature dependence of conductivity $sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density $n_c(0)$, a
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma (n_s,T)=sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier density) to a non
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both th
The time-dependent fluctuations of conductivity sigma have been studied in a two-dimensional electron system in low-mobility, small-size Si inversion layers. The noise power spectrum is ~1/f^{alpha} with alpha exhibiting a sharp jump at a certain ele