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Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma (n_s,T)=sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier density) to a non-zero value as temperature T->0. In 2D, the existence of a metal with dsigma/dT>0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D.
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as sigma (n_s,T,B=0)=sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zer
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $sigma (T)$ was measured for different values of substrate bias, which changes both potential sca
The temperature dependence of conductivity $sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and
Using lattice simulations, we study the infrared behavior of a particularly interesting SU(2) gauge theory, with six massless Dirac fermions in the fundamental representation. We compute the running gauge coupling derived non-perturbatively from the
Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we f