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The temperature dependence of conductivity $sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density $n_c(0)$, and $dsigma/dT >0$ in the metallic phase. At low fields ($Blesssim 2$ T), $n_c$ increases as $n_c(B) - n_c(0) propto B^{beta}$ ($betasim 1$), and the zero-temperature conductivity scales as $sigma (n_s,B,T=0)/sigma (n_s,0,0)=f(B^{beta}/delta_n)$ (where $delta_n=(n_s-n_c(0))/n_c(0)$, and $n_s$ is electron density) as expected for a quantum phase transition. The metallic phase persists in fields of up to 18 T, consistent with the saturation of $n_c$ at high fields.
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as sigma (n_s,T,B=0)=sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zer
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both th
The time-dependent fluctuations of conductivity sigma have been studied in a two-dimensional electron system in low-mobility, small-size Si inversion layers. The noise power spectrum is ~1/f^{alpha} with alpha exhibiting a sharp jump at a certain ele
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high
Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective