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A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic materials, the study reveals a unique relation between the macroscopic potential and the orientation-dependent magnetic quadrupole, as a result of the different crystalline and magnetic symmetries. In particular, at surfaces and interfaces of a truncated bulk without inversion and time-reversal symmetries, the average vector potential exhibits a discontinuity, which results in an interfacial magnetic field. In general, however, due to the surface and interface electronic and atomic relaxations, additional magnetization may result. For the experimentally-observed magnetoelectric antiferromagnets, in particular, our symmetry analysis suggest that the relaxation effects could well be a system response to the presence of such a potential discontinuity.
We show, by solving Maxwells equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectric has a diagonal component in its mag
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity refers to the mutual coupling between magnetism and electricity. The discipline of multiferroicity has never been so highly active as that in the first decade
The contribution of bulk and surface to the electrical resistance along crystallographic textit{b}- and textit{c}-axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic narrow-gap s
We propose a new type of spin-valley locking (SVL), named $textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule heating, es