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The contribution of bulk and surface to the electrical resistance along crystallographic textit{b}- and textit{c}-axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic narrow-gap semiconductor CrSb$_{2}$. ARPES shows a clear electron-like pocket at $Gamma$-$Z$ direction which is absent in the bulk band structure. First-principles calculations also confirm the existence of metallic surface states inside the bulk gap. Whereas combined experimental probes point to enhanced surface conduction similar to topological insulators, surface states are trivial since CrSb$_2$ exhibits no band inversion.
We present magnetic stray field measurements performed on a single micro-crystal of the half metallic ferromagnet CrO$_2$, covered by a naturally grown 2,-,5,nm surface layer of antiferromagnetic (AFM) Cr$_2$O$_3$. The temperature variation of the st
The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remai
A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic materials, the study reveals a unique relation between the macroscopic pote
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lase
With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications,