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We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution. A classical two carrier analysis revealed that the carrier densities of the films increased with increasing Te content, while no significant change was observed for the S-substitution. This composition dependence of the carrier density well corresponds to the $T_{mathrm c}$ behavior. The clear correlation between $T_{mathrm c}$ and the carrier densities suggests that the structural transition affects the electronic structure in a different manner between Fe(Se,S) and Fe(Se,Te) and that this fact is the direct cause of the difference in the $T_{mathrm c}$ behaviors at the end point of the structural transition.
We report on the magnetic penetration depth, lambda, in a type II superconductor NbB_{2+x} determined by muon spin rotation method. We show in the sample with x=0.1 that lambda at 2.0 K is independent of an applied magnetic field. This suggests that
We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the de
Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoem
We report the successful growth of epitaxial thin films of FeSe$_{1-x}$S$_x$ with $x leq 0.43$ via pulsed laser deposition. As S content increases, the nematic transition temperature, $T_{mathrm s}$, decreases systematically and the superconducting t
The precondition for the BKT transition in thin superconducting films, the logarithmic intervortex interaction, is satisfied at distances short relative to $Lambda=2lambda^2/d$, $lambda$ is the London penetration depth of the bulk material and $d$ is