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We report the successful growth of epitaxial thin films of FeSe$_{1-x}$S$_x$ with $x leq 0.43$ via pulsed laser deposition. As S content increases, the nematic transition temperature, $T_{mathrm s}$, decreases systematically and the superconducting transition temperature, $T_{mathrm c}$, shows a gradual decrease even when $x$ exceeds the nematic end point (NEP), similar to bulk samples. A new kink anomaly was observed in the $rho$-$T$ curves for films with large $x$, which is likely due to a magnetic transition. The obtained phase diagram of FeSe$_{1-x}$S$_x$ thin films is in contrast to that of FeSe$_{1-y}$Te$_y$ films, which shows a rapid increase of $T_{mathrm c}$ at the NEP. Our results demonstrate that the relation between the nematic order and the superconductivity is not universal in the FeSe system, suggesting that the nematic transition does not play a primary role in the superconductivity in these materials.
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays
We report the synthesis of tetragonal $mathrm{FeS}_xmathrm{Se}_{1-x}$ films ($x leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition techniqu
A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. T