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We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter onfiguration provides a self-contained, all-fiber, single photon source suitable as a plug-and-play solution for applications requiring bright, on-demand single photons. Using InAsP quantum dots embedded in InP nanowire waveguides, we demonstrate coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97%.
Direct UV-written waveguides are fabricated in silica-on-silicon with birefringence of $(4.9 pm 0.2) times 10^{-4}$, much greater than previously reported in this platform. We show that these waveguides are suitable for the generation of heralded sin
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photon
We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot desig
Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and couplin
Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-di