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تسجيل مستخدم جديدElectrical Induced Annealing technique for neutron radiation damage on SiPMs
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The use of Silicon Photo-Multipliers (SiPMs) has become popular in the design of High Energy Physics experimental apparatus with a growing interest for their application in detector area where a significant amount of non-ionising dose is delivered. For these devices, the main effect caused by the neutron flux is a linear increase of the leakage current. In this paper, we present a technique that provides a partial recovery of the neutron damage on SiPMs by means of an Electrical Induced Annealing. Tests were performed on a sample of three SiPM arrays (2 $times$ 3) of 6 mm$^2$ cells with 50 {mu}m pixel sizes: two from Hamamatsu and one from SensL. These SiPMs were irradiated up to an integrated neutron flux up to 8 $times$ 10$^{11}$ n$_{1MeV-eq}$/cm$^2$. Our techniques allowed to reduced the leakage current of a factor ranging between 15-20 depending on the overbias used and the SiPM vendor.
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