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The correlation between magnetic properties and microscopic structural aspects in the diluted magnetic semiconductor Ge$_{1-x}$Mn$_{x}$Te is investigated by x-ray diffraction and magnetization as a function of the Mn concentration $x$. The occurrence of high ferromagnetic-transition temperatures in the rhombohedrally distorted phase of slowly-cooled Ge$_{1-x}$Mn$_{x}$Te is shown to be directly correlated with the formation and coexistence of strongly-distorted Mn-poor and weakly-distorted Mn-rich regions. It is demonstrated that the weakly-distorted phase fraction is responsible for the occurrence of high-transition temperatures in Ge$_{1-x}$Mn$_{x}$Te. When the Mn concentration becomes larger, the Mn-rich regions start to switch into the undistorted cubic structure, and the transition temperature is suppressed concurrently. By identifying suitable annealing conditions, we successfully increased the transition temperature to above 200 K for Mn concentrations close to the cubic phase. Structural data indicate that the weakly-distorted phase fraction can be restored at the expense of the cubic regions upon the enhancement of the transition temperature, clearly establishing the direct link between high-transition temperatures and the weakly-distorted Mn-rich phase fraction.
We investigated the magnetic properties of (La$_{1-x}$Ba$_{x}$)(Zn$_{1-x}$Mn$_{x}$)AsO with $x$ varying from 0.005 to 0.05 at an external magnetic field of 1000 Oe. For doping levels of $x$ $leq$ 0.01, the system remains paramagnetic down to the lowe
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has
We have performed x-ray magnetic circular dichroism (XMCD) and valence-band photoemission studies of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te. XMCD signals due to ferromagnetism were observed at the Cr 2p absorption edge. Comparison
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of c