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تسجيل مستخدم جديدIn(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor
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A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.
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We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnet
ic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
Dirac matters provide a platform for exploring the interplay of their carriers with other quantum phenomena. Sr$_{1-x}$Mn$_{1-y}$Sb$_2$ has been proposed to be a magnetic Weyl semimetal and provides an excellent platform to study the coupling between
Weyl fermions and magnons. Here, we report comprehensive inelastic neutron scattering (INS) measurements on single crystals of Sr$_{1-x}$Mn$_{1-y}$Sb$_2$, which have been well characterized by magnetization and magnetotransport measurements, both of which demonstrate that the material is a topologically nontrivial semimetal. The INS spectra clearly show a spin gap of $sim6$ meV. The dispersion in the magnetic Mn layer extends up to about 76 meV, while that between the layers has a narrow band width of 6 meV. We find that the linear spin-wave theory using a Heisenberg spin Hamiltonian can reproduce the experimental spectra with the following parameters: a nearest-neighbor ($SJ_1sim28.0$ meV) and next-nearest-neighbor in-plane exchange interaction ($SJ_2sim9.3$ meV) , interlayer exchange coupling ($SJ_csim-0.1$ meV), and spin anisotropy constant ($SDsim-0.07$ meV). Despite the coexistence of Weyl fermions and magnons, we find no clear evidence that the magnetic dynamics are influenced by the Weyl fermions in Sr$_{1-x}$Mn$_{1-y}$Sb$_2$, possibly because that the Weyl fermions and magnons reside in the Sb and Mn layers separately, and the interlayer coupling is weak due to the quasi-two-dimensional nature of the material, as also evident from the small $SJ_c$ of -0.1 meV.
Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic 3$d$ elemen
ts into bulk of 3D topological insulators. In Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$, the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, $T_C$, the scanning tunneling microscopy studies have reported a large Dirac gap $sim20-100$ meV. The discrepancy between the low temperature of quantum anomalous Hall effect ($ll T_C$) and large spectroscopic Dirac gaps ($gg T_C$) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of pristine and potassium doped surface of Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$. Upon potassium deposition, the $p$-type surface state of pristine sample was turned into an $n$-type, allowing spectroscopic observation of Dirac point. We find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.
It is shown that a temperature window between the Curie temperatures of martensite and austenite phases around the room temperature can be obtained by a vacancy-tuning strategy in Mn-poor Mn1-xCoGe alloys (0 <= x <= 0.050). Based on this, a martensit
ic transformation from paramagnetic austenite to ferromagnetic martensite with a large magnetization difference can be realized in this window. This gives rise to a magnetic-field-induced martensitic transformation and a large magnetocaloric effect in the Mn1-xCoGe system. The decrease of the transformation temperature and of the thermal hysteresis of the transformation, as well as the stable Curie temperatures of martensite and austenite, are discussed on the basis of the Mn-poor Co-vacancy structure and the corresponding valence-electron concentration.
We present an experimental study for polycrystalline samples of the diluted magnetic semiconductor Mn(x)Ga(1-x)N (x<0.04) in order to address some of the existing controversial issues. Different techniques were used to characterize the electronic, ma
gnetic, and structural properties of the samples, and inelastic neutron scattering was employed to determine the magnetic excitations associated with Mn monomers and dimers. Our main conclusions are as follows: (i) The valence of the Mn ions is 2+. (ii) The Mn(2+) ions experience a substantial single-ion axial anisotropy with parameter D=0.027(3) meV. (iii) Nearest-neighbor Mn(2+) ions are coupled antiferromagnetically. The exchange parameter J= 0.140(7) meV is independent of the Mn content x, i.e., there is no evidence for hole-induced modifications of J towards a potentially high Curie temperature postulated in the literature.
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