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تسجيل مستخدم جديدMultidomain Skyrmion Lattice State in Cu$_2$OSeO$_3$
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Magnetic skyrmions in chiral magnets are nanoscale, topologically-protected magnetization swirls that are promising candidates for spintronics memory carriers. Therefore, observing and manipulating the skyrmion state on the surface level of the materials are of great importance for future applications. Here, we report a controlled way of creating a multidomain skyrmion state near the surface of a Cu$_{2}$OSeO$_{3}$ single crystal, observed by soft resonant elastic x-ray scattering. This technique is an ideal tool to probe the magnetic order at the $L_{3}$ edge of $3d$ metal compounds giving a depth sensitivity of ${sim}50$ nm. The single-domain sixfold-symmetric skyrmion lattice can be broken up into domains overcoming the propagation directions imposed by the cubic anisotropy by applying the magnetic field in directions deviating from the major cubic axes. Our findings open the door to a new way to manipulate and engineer the skyrmion state locally on the surface, or on the level of individual skyrmions, which will enable applications in the future.
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The cubic chiral helimagnets with the $P2_13$ space group represent a group of compounds in which the stable skyrmion-lattice state is experimentally observed. The key parameter that controls the energy landscape of such systems and determines the em
ergence of a topologically nontrivial magnetic structures is the Dzyaloshinskii-Moriya interaction (DMI). Chemical substitution is recognized as a convenient instrument to tune the DMI in real materials and has been successfully utilized in studies of a number of chiral magnets, such as MnSi, FeGe, MnGe, and others. In our study, we applied small-angle neutron scattering to investigate how chemical substitution influences the skyrmionic properties of an insulating helimagnet Cu$_2$OSeO$_3$ when Cu ions are replaced by either Zn or Ni. Our results demonstrate that the DMI is enhanced in the Ni-substituted compounds (Cu,Ni)$_2$OSeO$_3$, but weakened in (Cu,Zn)$_2$OSeO$_3$. The observed changes in the DMI strength are reflected in the magnitude of the spin-spiral propagation vector and the temperature stability of the skyrmion phase.
Magnetic skyrmions have been the focus of intense research due to their unique qualities which result from their topological protections. Previous work on Cu$_2$OSeO$_3$, the only known insulating multiferroic skyrmion material, has shown that chemic
al substitution alters the skyrmion phase. We chemically substitute Zn, Ag, and S into powdered Cu$_2$OSeO$_3$ to study the effect on the magnetic phase diagram. In both the Ag and the S substitutions, we find that the skyrmion phase is stabilized over a larger temperature range, as determined via magnetometry and small-angle neutron scattering (SANS). Meanwhile, while previous magnetometry characterization suggests two high temperature skyrmion phases in the Zn-substituted sample, SANS reveals the high temperature phase to be skyrmionic while we are unable to distinguish the other from helical order. Overall, chemical substitution weakens helical and skyrmion order as inferred from neutron scattering of the $|$q$| approx$ 0.01 $r{A}^{-1}$ magnetic peak.
We have grown Cu$_2$OSeO$_3$ single crystals with an optimized chemical vapor transport technique by using SeCl$_4$ as a transport agent. Our optimized growth method allows to selectively produce large high quality single crystals. The method is show
n to consistently produce Cu$_2$OSeO$_3$ crystals of maximum size 8 mm x 7 mm x 4 mm with a transport duration of around three weeks. We found this method, with SeCl$_4$ as transport agent, more efficient and simple compared to the commonly used growth techniques reported in literature with HCl gas as transport agent. The Cu$_2$OSeO$_3$ crystals have very high quality and the absolute structure are fully determined by simple single crystal x-ray diffraction. We observed both type of crystals with left- and right-handed chiralities. Our magnetization and ferromagnetic resonance data show the same magnetic phase diagram as reported earlier.
We report the study of the skyrmion state near the surface of Cu$_2$OSeO$_3$ using soft resonant elastic x-ray scattering (REXS) at the Cu $L_3$ edge. Within the lateral sampling area of $200 times 200$ $mu$m$^2$, we found a long-range-ordered skyrmi
on lattice phase as well as the formation of skyrmion domains via the multiple splitting of the diffraction spots. In a recent REXS study of the skyrmion phase of Cu$_2$OSeO$_3$ [Phys. Rev. Lett. 112, 167202 (2014)], Langner et al. reported the observation of the unexpected existence of two distinct skyrmion sublattices that arise from inequivalent Cu sites, and that the rotation and superposition of the two periodic structures leads to a moir{e} pattern. However, we find no energy splitting of the Cu peak in x-ray absorption measurements and, instead, discuss alternative origins of the peak splitting. In particular, we find that for magnetic field directions deviating from the major cubic axes, a multidomain skyrmion lattice state is obtained, which consistently explains the splitting of the magnetic spots into two - and more - peaks.
Chiral magnetic textures with non-trivial topology are known as skyrmions, and due to their unique properties they are promising in novel magnetic storage applications. While the electric manipulation of either isolated skyrmions or a whole skyrmion
lattice have been intensively reported, the electric effects on skyrmion clusters remain scarce. In magnetoelectric compound Cu$_2$OSeO$_3$, a skyrmion cluster can be created near the helical-skyrmion phase boundary. Here, we report the in situ electric field writing/erasing of skyrmions in such a skyrmion cluster. Our real space/time image data obtained by Lorentz transmission electron microscopy and the quantitative analysis evidence the linear increase of the number of skyrmions in the cluster upon the application of a creating electric field. The energy needed to create a single skyrmion is estimated to be $mathcal{E}=4.7 times 10^{-24}$ J.
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