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We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable $I$-$V$ characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or non-resonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneli
Based on the dielectric continuum model, we calculated the phonon assisted tunneling (PAT) current of general double barrier resonant tunneling structures (DBRTSs) including both symmetric and antisymmetric ones. The results indicate that the four hi
We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillatio
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectr