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We experimentally quantify the contribution of magnetic dipole (MD) transitions to the near-infrared light emission from trivalent erbium-doped yttrium oxide (Er$^{3+}$:Y$_2$O$_3$). Using energy-momentum spectroscopy, we demonstrate that the $^4$I$_{13/2}{to}^4$I$_{15/2}$ emission near 1.5 $mu$m originates from nearly equal contributions of electric dipole (ED) and MD transitions that exhibit distinct emission spectra. We then show how these distinct spectra, together with the differing local density of optical states (LDOS) for ED and MD transitions, can be leveraged to control Er$^{3+}$ emission in structured environments. We demonstrate that far-field emission spectra can be tuned to resemble almost pure emission from either ED or MD transitions, and show that the observed spectral modifications can be accurately predicted from the measured ED and MD intrinsic emission rates.
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er$
We report on transferring 1E-16-level fractional frequency stability of a master laser operated at 1.5 {mu}m to a slave laser operated at 698 nm, using a femtosecond fiber comb as transfer oscillator. With the 698 nm laser, the 1S_0 - 3P_0 clock tran
Enhancing the light-matter interaction in two-dimensional (2D) materials with high-$Q$ resonances in photonic structures has boosted the development of optical and photonic devices. Herein, we intend to build a bridge between the radiation engineerin
Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an essential compone
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers