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تسجيل مستخدم جديدOn-chip erbium-doped lithium niobate microring lasers
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Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an essential component for integrated optical system, is urgently needed. In this paper, we reported the realization of 1550-nm band on-chip LNOI microlasers based on erbium-doped LNOI ring cavities with loaded quality factors higher than one million, which were fabricated by using electron beam lithography and inductively coupled plasma reactive ion etching processes. These microlasers demonstrated a low pump threshold of ~20 {mu}W and stable performance under the pump of a 980-nm band continuous laser. Comb-like laser spectra spanning from 1510 nm to 1580 nm were observed in high pump power regime, which lays the foundation of the realization of pulsed laser and frequency combs on rare-earth ion doped LNOI platform. This work has effectively promoted the development of on-chip integrated active LNOI devices.
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Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a na
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Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers
based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based
optical devices with high performance has been realized in recent years. Here we developed 1 mol% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ sim $ 1.05$times 10^{^5}$ ). C-band laser emission with $ sim $1530 nm and $ sim $1560 nm from the high-Q erbium-doped LNOI microdisk was demonstrated both with 974 nm and 1460 nm pumping, and the latter has better thermal stability. This microlaser would play an important role in the photonic integrated circuits of lithium niobate platform.
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, howeve
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