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We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in comparison to its free electron value $g=2$ and oscillates as a function of the filling factor $ u $ in the range $2leq g^{ast}lesssim 4$ reaching maxima at even $ u $ and minima at odd $ u $. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{ast}$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{ast}approx 2.3$. A relation to the recent experiment is discussed.
Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We
We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and di
Impurities are unavoidable during the preparation of graphene samples and play an important role in graphenes electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport properties
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and
The search of new means of generating and controlling topological states of matter is at the front of many joint efforts, including bandgap engineering by doping and light-induced topological states. Most of our understading, however, is based on a s