ترغب بنشر مسار تعليمي؟ اضغط هنا

Enhancement of electron transport and bandgap opening in graphene induced by adsorbates

60   0   0.0 ( 0 )
 نشر من قبل Ai-Min Guo
 تاريخ النشر 2019
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Impurities are unavoidable during the preparation of graphene samples and play an important role in graphenes electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport properties of a two-terminal zigzag graphene nanoribbon (ZGNR) device whose scattering region is covered by various adsorbates within the framework of the tight-binding approximation, by taking into account the coupling strength $gamma$ between adsorbates and carbon atoms, the adsorbate concentration $n_i$, and the on-site energy disorder of adsorbates. Our results indicate that when the scattering region is fully covered by homogeneous adsorbates, i.e., $n_i=1$, a transmission gap opens around the Dirac point and its width is almost proportional to $gamma^2$. In particular, two conductance plateaus of $G=2e^2/h$ appear in the vicinity of the electron energy $E=pm gamma$. When the scattering region is partially covered by homogeneous adsorbates ($0<n_i<1$), the transmission gap still survives around the Dirac point even at low $n_i$, and its width is firstly increased by $n_i$ and then declined by further increasing $n_i$; whereas the conductance decreases with $n_i$ in the regime of low $n_i$ and increases with $n_i$ in the regime of high $n_i$. While in the presence of disordered adsorbates whose on-site energies are random variables characterized by the disorder degree, the transmission gap disappears at low $n_i$ and reappears at relatively high $n_i$. Furthermore, the transmission ability of the ZGNR device can be enhanced by the adsorbate disorder when the disorder degree surpasses a critical value, contrary to the localization picture that the conduction of a nanowire becomes poorer with increasing the disorder degree. The physics underlying these transport characteristics is discussed. Our results are in good agreement with experiments.



قيم البحث

اقرأ أيضاً

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and di sordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits plateau structure at suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes can not be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with the recent experiment.
103 - A. V. Volkov , A. A. Shylau , 2012
We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in c omparison to its free electron value $g=2$ and oscillates as a function of the filling factor $ u $ in the range $2leq g^{ast}lesssim 4$ reaching maxima at even $ u $ and minima at odd $ u $. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{ast}$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{ast}approx 2.3$. A relation to the recent experiment is discussed.
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the ch arge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at u=0 made up by both electrons and holes.
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely propor tional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at higher temperatures and a variable range hopping at lower temperatures. By varying the geometric capacitance through the addition of top gates, we find that charging effects constitute a significant portion of the activation energy.
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-ele ctron scattering, we find that the inelastic scattering time $tau sim 10^{-2}-10^{-1} mathrm{ps}$ and the mean free path $l sim 10-10^2 mathrm{nm}$ for electron densities $n = 10^{12}-10^{13} mathrm{cm}^{-2}$. In particular, we find that the mean free path exhibits a finite jump at the phonon energy $200 mathrm{meV}$ due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا