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Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

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 نشر من قبل Johann Coraux
 تاريخ النشر 2011
  مجال البحث فيزياء
والبحث باللغة English
 تأليف Chi Vo-Van




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Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown by diffraction, scanning tunnelling microscopy, and Raman spectroscopy. Their structural quality is as high as that of graphene produced on Ir bulk single crystals, i.e. much higher than on metal thin films used so far.



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