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An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferromagnets, but can also occur in antiferromagnetic materials and even be stronger under some conditions. In this paper we demonstrate transfer of spin angular momentum across an interface between ferromagnetic and antiferromagnetic metals. The spin transfer is mediated by an electrical current of high density (~10^12 A/m^2) and revealed by variation in the exchange bias at the ferromagnet/antiferromagnet interface. We find that, depending on the polarity of the electrical current flowing across the interface, the strength of the exchange bias can either increase or decrease. This finding is explained by the theoretical prediction that a spin polarized current generates a torque on magnetic moments in the antiferromagnet. Current-mediated variation of exchange bias can be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications.
The spin-orbit torque induced by a topological insulator (TI) is theoretically examined for spin wave generation in a neighboring antiferromagnetic thin film. The investigation is based on the micromagnetic simulation of N{e}el vector dynamics and th
Recently, antiferromagnets have received revived interest due to their significant potential for developing next-generation ultrafast magnetic storage. Here we report dc spin pumping by the acoustic resonant mode in a canted easy-plane antiferromagne
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on f
The magnetic order and the spin dynamics in the antiferromagnetic entropy-stabilized oxide (Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)O (MgO-ESO) have been studied using muon spin relaxation ($mu$SR) and inelastic neutron scattering. We find
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendic