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Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orbit coupling at bottom Pt/[Co/Pd] interface compared to its upper counterpart without Pt. Both experimental and theoretical analyses unravel that the torque efficiency of antiferromagnetic coupled stacks is significantly higher than the ferromagnetic counterpart, making the critical switching current of SAF comparable to the conventional single ferromagnet. Besides adding an important dimension to spin-orbit torque, the efficient switching of completely compensated SAF might advance magnetic memory devices with high density, high speed and low power consumption.
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices
The spin-orbit torque induced by a topological insulator (TI) is theoretically examined for spin wave generation in a neighboring antiferromagnetic thin film. The investigation is based on the micromagnetic simulation of N{e}el vector dynamics and th
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is perpendicula
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune t