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We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the induced nuclear spin polarization and dipolar magnetic fields. In GaAs/AlGaAs parabolic quantum wells the nuclear spin polarization can be as high as 80% and the induced nuclear magnetic fields can approach a few gauss with an associated nuclear resonance shift of the order of kHz when the electronic system is 100% spin polarized. These fields and shifts can be tuned using small electric fields. We discuss the implications of such control for optical nuclear magnetic resonance experiments in low-dimensional semiconductor nanostructures.
We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were carried out on individual quantum dots studied by micro-photoluminesce
We introduce an alternate route to dynamically polarize the nuclear spin host of nitrogen-vacancy (NV) centers in diamond. Our approach articulates optical, microwave and radio-frequency pulses to recursively transfer spin polarization from the NV el
We calculate the Overhauser frequency shifts in semiconductor nanostructures resulting from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins. The frequency shifts depend on the electronic local density of states and
Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum well heterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal mag
Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and in