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The surface stress and the contact potential differences of elastically deformed faces of Al, Cu, Au, Ni, and Ti crystals are calculated within the modified stabilized jellium model using the self-consistent Kohn-Sham method. The obtained values of the surface stress are in agreement with the results of the available first-principal calculations. We find that the work function decreases/increases linearly with elongation/compression of crystals. Our results confirm that the available experimental data for the contact potential difference obtained for the deformed surface by the Kelvin method do not correspond to the change of the work function but to the change of the surface potential. The problem of anisotropy of the work function and ionization potential of finite sample is discussed.
We perform detailed numerical simulations of field ion microscopy images of faceted crystals and compare them with experimental observations. In contrast to the case of crystals with a smooth surface, for a faceted topography we find extreme deformat
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2 exhibits long ret
We present a theoretical framework allowing to properly address the nature of surface-like eigenmodes in a hypersonic surface phononic crystal, a composite structure made of periodic metal stripes of nanometer size and periodicity of 1 micron, deposi
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the ch
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tun