اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدColossal Spin Hall Effect in Ultrathin Metallic Films
151
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the charge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
قيم البحث
اقرأ أيضاً
The two-dimensional (2D) metal PtCoO$_2$ is renowned for the lowest room temperature resistivity among all oxides, close to that of the top two materials Ag and Cu. In addition, we theoretically predict a strong intrinsic spin Hall effect. This origi
nates from six strongly-tilted Dirac cones that we find in the electronic structure near the Fermi surface, where a gap is opened by large spin-orbit coupling (SOC). This is underpinned by rich topological properties; in particular, the phenomenology of a mirror Chern metal is realized not exactly, but very accurately, on account of an approximate crystalline symmetry. We expect that such vicinity topology to be a feature of relevance well beyond this material. Our Wilson loop analysis indicates further elaborate features such as fragile topology. These findings highlight PtCoO$_2$ as a promising material for spintronic applications as well as a platform to study the interplay of symmetry and topology.
Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier densities an
d of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and non-saturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below $T sim 40$ K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase-transition around this temperature.
Spectra of the differential tunneling conductivity for ultrathin lead films grown on Si(111)7x7 single crystals with a thickness from 9 to 50 monolayers have been studied by low-temperature scanning tunneling microscopy and spectroscopy. The presence
of local maxima of the tunneling conductivity is typical for such systems. The energies of maxima of the differential conductivity are determined by the spectrum of quantum-confined states of electrons in a metallic layer and, consequently, the local thickness of the layer. It has been shown that features of the microstructure of substrates, such as steps of monatomic height, structural defects, and inclusions of other materials covered with a lead layer, can be visualized by bias-modulation scanning tunneling spectroscopy.
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in
(In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect - a phenomenon that governs interconversion between spin and charge currents - in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.
We investigated the magnetization dynamics of a patterned Co$_{25}$Fe$_{75}$-based heterostructure with a novel optical measurement technique that we call microfocused frequency-resolved magneto optic Kerr effect ($mu$FR-MOKE). We measured the magnet
ic field dependence of the dynamical spin-wave susceptibility and recorded a spatial map of the spin-waves excited by a microwave antenna. We compare these results to those obtained on the same sample with the established microfocused Brillouin light scattering technique. With both techniques, we find a spin-wave propagation length of 5.6$mu$m at 10GHz. Furthermore, we measured the dispersion of the wavevector and the spin-wave propagation length as a function of the external magnetic field. These results are in good agreement with existing literature and with the employed Kalinkos-Slavin model.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
